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| CHA2090 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. 30 25 12 10 8 6 4 2 0 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 Frequency ( GHz ) Main Features Broadband performance 17-24GHz 2.0dB noise figure 23dB gain, 1dB gain flatness Low DC power consumption, 55mA Chip size : 2,170 x 1,270x 0.1mm 20 15 10 5 0 On wafer typical measurements Main Characteristics Tamb = +25C, Vd=4.5V, Pads B,D,E=GND Symbol Fop NF G VSWRin VSWRout Parameter Operating frequency range Noise figure Gain Input VSWR Output VSWR 19 Min 17 2.0 23 2:1 2:1 Typ Max 24 3.0 Unit GHz dB dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20909347 - 13 Dec. 99 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2090 Main Characteristics Tamb = +25C, Vd=4.5V, Pads B,D,E=GND Symbol Fop NF G Pout VSWRin VSWRout Vdd Parameter Operating frequency range Noise figure (1) Gain (1) Pout -1dB gain compression Input VSWR (1) Output VSWR (1) Positive Drain voltage (2) 17-24GHz Low Noise Amplifier Min 17 Typ Max 24 Unit GHz dB dB dBm 2 19 23 10 2.0:1 2.0:1 4.5 3 2.5:1 2.5:1 5.0 V (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. When the chip is attached with typical 0.15nH input and output bonding wires, the indicated parameter values should be improved. (2) See chip biasing option page 7/8. Absolute Maximum Ratings (1) Tamb = +25C Symbol Vd Pin Top Tstg Parameter Drain bias voltage (3) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 5.5 +15 -40 to +85 -55 to +125 Unit V dBm C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) See chip biasing option page 7/8. Ref. : DSCHA20909347 - 13 Dec. 99 2/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz Low Noise Amplifier Typical Result Chip Typical Response ( On wafer Sij ) : Tamb = +25C VD = 4.5V ID = 55mA Frequency GHz 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 27.000 28.000 29.000 30.000 31.000 32.000 33.000 34.000 35.000 36.000 37.000 38.000 39.000 40.000 MS11 mod dB -0.53 -0.06 -0.10 -0.16 -0.23 -0.34 -0.35 -0.45 -0.52 -0.75 -1.21 -2.33 -4.60 -8.86 -16.48 -24.70 -27.75 -23.51 -21.41 -18.63 -16.77 -14.95 -13.73 -12.59 -11.60 -10.61 -9.34 -7.89 -6.63 -5.86 -4.83 -3.95 -3.18 -2.61 -2.15 -1.77 -1.65 -1.64 -1.65 -1.76 PS11 pha deg -20.8 -39.0 -58.5 -77.4 -96.5 -115.2 -134.1 -154.1 -175.4 160.3 132.1 97.8 57.2 8.5 -40.4 -70.2 -80.6 -87.4 -95.7 -107.0 -115.6 -123.2 -132.0 -138.8 -144.7 -149.8 -154.5 -160.6 -171.3 179.9 172.0 161.7 151.2 140.2 129.3 117.9 106.7 95.9 85.9 75.2 MS12 mod dB -89.62 -97.43 -87.21 -84.87 -83.35 -66.23 -72.40 -73.93 -72.23 -66.01 -60.26 -56.60 -53.53 -52.43 -52.50 -52.26 -52.62 -51.36 -51.27 -54.07 -55.06 -57.35 -59.54 -60.85 -62.07 -54.29 -55.03 -52.05 -60.41 -56.56 -52.73 -54.11 -54.59 -55.15 -51.68 -57.64 -60.87 -53.10 -47.45 -46.80 3/8 CHA2090 PS12 pha deg -92.0 26.6 -23.0 -135.7 120.1 84.2 -58.1 -13.6 -7.1 -34.2 -60.3 -94.9 -135.9 -173.4 157.8 135.4 108.9 100.6 60.6 52.8 30.3 23.7 8.0 32.3 49.5 40.2 23.9 -11.6 -22.1 23.2 -13.7 -40.7 -51.2 -37.9 -92.2 -111.2 -68.5 -33.4 -99.7 -137.0 MS21 mod dB -41.76 -48.17 -52.46 -61.22 -35.86 -12.12 1.34 7.48 11.96 15.54 18.30 19.92 21.36 22.49 23.60 23.89 24.01 23.66 23.52 23.46 23.11 23.14 22.82 22.36 22.01 21.46 20.91 20.49 20.06 19.50 19.03 18.31 17.51 16.54 15.35 13.94 12.41 10.67 8.76 6.70 PS21 pha deg -148.5 170.5 74.5 154.8 -69.1 -123.6 145.9 75.4 18.3 -28.2 -72.2 -116.5 -163.1 149.3 100.6 62.2 28.4 -1.9 -30.5 -57.8 -84.4 -111.0 -137.3 -162.8 171.8 147.9 125.0 102.3 78.5 55.4 31.5 6.9 -17.5 -42.3 -66.8 -91.0 -114.4 -137.5 -159.6 178.9 MS22 mod dB -0.72 -0.30 -0.33 -0.49 -0.89 -1.77 -3.35 -6.63 -9.34 -13.97 -22.57 -39.69 -30.19 -25.30 -21.56 -19.34 -17.60 -16.51 -16.34 -17.75 -19.33 -22.26 -25.44 -29.95 -28.26 -22.90 -19.22 -17.12 -16.20 -14.73 -13.72 -13.60 -13.61 -14.22 -14.94 -15.31 -13.87 -11.60 -9.18 -7.06 PS22 pha deg -23.8 -50.3 -75.6 -101.9 -129.8 -159.0 168.8 141.1 119.1 85.5 53.2 -60.4 -133.1 -127.8 -134.5 -144.1 -158.0 -172.3 163.7 149.6 131.6 113.9 89.1 43.8 -24.5 -58.9 -84.3 -102.6 -114.2 -123.1 -137.5 -147.0 -155.8 -161.4 -161.8 -154.5 -143.9 -140.4 -143.5 -151.0 Ref. : DSCHA20909347 - 13 Dec. 99 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2090 Typical on Wafer Measurements Bias conditions: Vd = 4.5V, Id = 55mA 17-24GHz Low Noise Amplifier 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Frequency ( GHz ) 25 30 25 20 20 15 15 10 5 10 0 -5 5 -10 -15 0 Gain dBS11 dBS22 -20 -25 -5 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 -30 Frequency ( GHz ) Ref. : DSCHA20909347 - 13 Dec. 99 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz Low Noise Amplifier Typical on Test Jig Measurements Bias conditions: Vd = 4.5V, Id = 55mA CHA2090 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Frequency ( GHz ) 25 30 25 20 20 15 15 10 5 10 0 -5 5 -10 -15 0 Gain -5 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 dBS11 dBS22 -20 -25 -30 Frequency ( GHz ) Ref. : DSCHA20909347 - 13 Dec. 99 5/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2090 17-24GHz Low Noise Amplifier Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be preferred. 2170 35 2100 1295 Bonding pad positions. ( Chip thickness : 100m. Pad size : 100x80m ) ( All dimensions are in micrometers ) Ref. : DSCHA20909347 - 13 Dec. 99 6/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 1270 35 1200 17-24GHz Low Noise Amplifier Chip Biasing options CHA2090 This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. The two requirements are : N1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 4.5V and B, D, E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = 10dBm Typical. ( Equivalent to A,B,C,D,E F: non connected and Vd=4.5V ; G1=G2=G3=+1.V ). Low Noise and higher output power Vd = 4.5V and B, C, F grounded. All the other pads non connected ( NC ). Idd = 75mA & Pout-1dB = 12dBm Typical.. Ref. : DSCHA20909347 - 13 Dec. 99 7/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2090 17-24GHz Low Noise Amplifier Ordering Information Chip form : CHA2090-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20909347 - 13 Dec. 99 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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